Publications

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Published in Materials Science in Semiconductor Processing, 2022

This paper proposes a systematic framework to simulate the large interacting particle system in semiconductor. Based on a classic drift-diffusion model, we simulate the evolution within the device. We also relate such dynamics to the physic and electrical behavior of the device

Recommended citation: Kuan Yang, Liping Fu, Junhao Chen et al

Anatomy of high-uniform unidirectional volatile switching behavior in SiO2/TiO2-based selection device

Published in Materials Today Advances, 2021

This paper works on the device physics features of a two-terminal device with volatile resistive swithing behavior. These features are of critical importance in neuromorphic computing. I introduced a stochastic model in order to simulate this behavior.

Recommended citation: Liping FU, Kuan YANG, Xiaoping GAO et al

The Conduction Mechanism Explanation Under Co-existence of Cu Atom and Oxygen Vacancy in Zinc Oxide Based RRAM by Markov Random Field Simulatiom

Published in , 2020

Submitted to Journal of Applied Physics D: Applied Physics, Under Revision

Recommended citation: Junjie Hu, Kuan Yang* (co-first), Junhao Chen et al