Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device
Published in Materials Science in Semiconductor Processing, 2022
Recommended citation: Kuan Yang, Liping Fu, Junhao Chen et al
This paper proposes a systematic framework to simulate the large interacting particle system in semiconductor. Based on a classic drift-diffusion model, we simulate the evolution within the device. We also relate such dynamics to the physic and electrical behavior of the device. Full Text